کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812453 | 1518113 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SrIrO3 films were grown on (111)SrTiO3 substrates at 650 to 700 °C by metal organic chemical vapor deposition (MOCVD). Stoichiometric films were obtained above 650 °C for a wide range of input gas flow rate of Ir source under a fixed rate for a Sr source. (001)m-oriented monoclinic SrIrO3 films with in-plane 3-varian were epitaxially grown and their rocking curve full width at half maximum (FWHM) of (001)m peaks were forward to be narrow, i.e. 0.075°. Average surface roughness (Ra) of such film was 0.30 nm, which suggests that the surface is smooth. Resistivity at room temperature was about 1300 μΩ cm and (111)-oriented epitaxial Pb(Zr0.4Ti0.6)O3 films with smooth surfaces were successfully grown on these SrIrO3 films. Good ferroelectricity characteristics comparable to those on (111)cSrRuO3(111)SrTiO3 was obtained except for the large coercive field (Ec) values.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 486, Issues 1â2, 22 August 2005, Pages 182-185
Journal: Thin Solid Films - Volume 486, Issues 1â2, 22 August 2005, Pages 182-185
نویسندگان
A. Sumi, Y.K. Kim, N. Oshima, K. Akiyama, K. Saito, H. Funakubo,