کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812457 | 1518113 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Composite gate dielectrics for advanced Si devices that include high-k dielectrics have two interfaces that determine performance and reliability: (i) the Si-SiO2 interface, and (ii) the internal interface between SiO2 and the high-k dielectric. Spectroscopic studies combined with ab initio electronic structure calculations and bond constraint theory (BCT) identify quantitative relationships between electronic and/or mechanical strain and densities of defects and defect precursors at these interfaces. Discontinuities in the number of bonds/atom, Nav at these dielectric interfaces introduce high densities of defects that scale as the square of Nav. BCT also explains the driving force for nano-scale self-organizations at these interfaces, and the effect this has on defect densities, and other interfacial properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 486, Issues 1â2, 22 August 2005, Pages 200-204
Journal: Thin Solid Films - Volume 486, Issues 1â2, 22 August 2005, Pages 200-204
نویسندگان
G. Lucovsky, J.C. Phillips,