کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812554 | 1518115 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evaluation of the thermal stability of reactively sputtered (Ti, Zr)Nx nano-thin films as diffusion barriers between Cu and Silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Evaluation of the thermal stability of reactively sputtered (Ti, Zr)Nx nano-thin films as diffusion barriers between Cu and Silicon Evaluation of the thermal stability of reactively sputtered (Ti, Zr)Nx nano-thin films as diffusion barriers between Cu and Silicon](/preview/png/9812554.png)
چکیده انگلیسی
Refractory binary metal nitride films, (Ti, Zr)Nx, were prepared by direct current reactive magnetron sputtering from a Ti-5 at.% Zr alloy target in N2Â /Â Ar gas mixtures and then used as diffusion barriers between Cu and Si substrates. In order to investigate the thermal stability of Cu (60 nm)Â /Â (Ti, Zr)Nx (6 nm)Â /Â Si contact systems, sheet resistance measurement, X-ray diffraction, scanning electron microscopy, cross-section transmission electron microscopy, and X-ray photoelectron spectroscopy depth profile were performed. Experimental results indicate that the barrier performance are significantly affected by the chemical composition of (Ti, Zr)Nx films, NÂ /Â (Ti, Zr) atomic ratio. Besides, our results also suggest that the refractory binary metal nitride film, (Ti, Zr)Nx, can be used as a superior diffusion barrier for Cu metallization as compared to the well-known TaN film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 484, Issues 1â2, 22 July 2005, Pages 265-271
Journal: Thin Solid Films - Volume 484, Issues 1â2, 22 July 2005, Pages 265-271
نویسندگان
Yu-Lin Kuo, Chiapyng Lee, Jing-Cheng Lin, Yee-Wen Yen, Wen-Horng Lee,