کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812598 1518116 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spontaneous nickel monosilicide nanowire formation by metal induced growth
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Spontaneous nickel monosilicide nanowire formation by metal induced growth
چکیده انگلیسی
Nickel monosilicide (NiSi) nanowires (NWs) were grown at a relatively low temperature of 575 °C by the Metal Induced Growth (MIG) method without using a gas type silicon source. In the MIG technique, silicon dioxide is first plasma deposited onto a Si wafer followed by 20-160 nm of Ni. Si is then deposited by D.C. magnetron sputtering on the heated substrate. A nickel silicide is first formed which then leads to nanowire formation. Nanowires were a single crystal structure, 20-100 nm in diameter and 1-10 μm in length. Composition and structure were verified by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The mechanism of NiSi nanowire formation is discussed herein.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1–2, 1 July 2005, Pages 60-65
نویسندگان
, ,