کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812598 | 1518116 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spontaneous nickel monosilicide nanowire formation by metal induced growth
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Nickel monosilicide (NiSi) nanowires (NWs) were grown at a relatively low temperature of 575 °C by the Metal Induced Growth (MIG) method without using a gas type silicon source. In the MIG technique, silicon dioxide is first plasma deposited onto a Si wafer followed by 20-160 nm of Ni. Si is then deposited by D.C. magnetron sputtering on the heated substrate. A nickel silicide is first formed which then leads to nanowire formation. Nanowires were a single crystal structure, 20-100 nm in diameter and 1-10 μm in length. Composition and structure were verified by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The mechanism of NiSi nanowire formation is discussed herein.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 60-65
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 60-65
نویسندگان
Joondong Kim, Wayne A. Anderson,