کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812612 | 1518116 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlling carrier density and its effect on I-V characteristics of the anatase-TiO2 thin films prepared by a sputter deposition method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Controlling carrier density and its effect on I-V characteristics of the anatase-TiO2 thin films prepared by a sputter deposition method Controlling carrier density and its effect on I-V characteristics of the anatase-TiO2 thin films prepared by a sputter deposition method](/preview/png/9812612.png)
چکیده انگلیسی
TiO2 thin films were prepared by the inductively coupled Ar+-plasma sputtering method. The effects of O2 partial pressure on photoelectrochemical performance of the mainly anatase-TiO2 electrodes were studied. O2 partial pressure systematically affected the carrier density and the current-voltage characteristics of the electrodes. An electrode deposited at lowest O2 partial pressure (11 mPa) showed almost 3 orders of magnitude greater donor density and 4 times larger photocurrent compared to the one deposited at highest O2 partial pressure (52 mPa). The differences in current-voltage characteristics of the electrode samples are discussed on the basis of the space charge layer formation in the electrodes with different carrier densities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 147-151
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 147-151
نویسندگان
Enkhtuvshin Dorjpalam, Masahide Takahashi, Yomei Tokuda, Toshinobu Yoko,