کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812635 | 1518116 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and galvanomagnetic properties of nanocrystalline gallium nitride films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanocrystalline GaN films were deposited on quartz substrates at â¼25 Pa with deposition temperature within 210-270 K using high pressure magnetron sputtering technique. Electrical, galvanomagnetic and microstructural properties were measured at different temperatures for these films. Studies on the variation of conductivity with temperature indicated Efros and Shklovskii (E-S) hopping within the Coulomb gap to be the predominant carrier transport process in the lower temperature region in these nanocrystalline GaN films. A cross-over from Mott's hopping in higher temperature region to E-S hopping in the “soft” Coulomb gap was noticed with lowering of temperature. Hall mobility was found to be dominated by the combined effects of scattering from ionized impurities, acoustic phonon and non-polar optical phonons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 287-295
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 287-295
نویسندگان
R.K. Roy, S. Gupta, A.K. Pal,