کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812636 | 1518116 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transparent conducting gallium-doped Zinc Oxide (ZnO:Ga) thin films were prepared on glass substrates by r.f. magnetron sputtering technique at low substrates temperature. The effects of post-annealing treatment on structural, electrical and optical properties of ZnO:Ga films were investigated. The results show that the annealing treatment leads to substational changes in the structural, electrical and optical characteristics of ZnO:Ga thin films. The electrical resistivity and the average transmittance of ZnO:Ga films were improved by annealing in vacuum ambient. The average transmittance increases from 85% to more than 90% and the electrical resistivity decreases from 1.13Ã10â3 Ωcm to 5.4Ã10â4 Ωcm after annealing treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 296-300
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 296-300
نویسندگان
Xuhu Yu, Jin Ma, Feng Ji, Yuheng Wang, Xijian Zhang, Honglei Ma,