کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812707 1518117 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The electrical and structural properties of the hydrogenated amorphous carbon films grown by close field unbalanced magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The electrical and structural properties of the hydrogenated amorphous carbon films grown by close field unbalanced magnetron sputtering
چکیده انگلیسی
Carbon-based materials, i.e., amorphous hydrogenated and nonhydrogenated forms of carbon, have attracted much attentions for application in microelectronic devices due to their importance in electrical, optical, and tribological properties. In this work, the hydrogenated amorphous carbon films were deposited by close field unbalanced magnetron (CFUBM) sputtering method with a graphite target in a mixed Ar (80%) and C2H2 (20%) plasma. We have observed a systematic variation for the properties of these films with the increase of DC bias voltage from 0 to −200 V. The investigation of the composition and structure was performed by Raman analysis, FT-IR (Fourier transform infrared) spectroscopy, and AFM (Atomic Force Microscopy). The electrical properties were observed by current-voltage (I-V) measurement and electrical resistivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 482, Issues 1–2, 22 June 2005, Pages 275-279
نویسندگان
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