کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812750 | 1518119 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of R.F. magnetron sputtered cadmium-tin-oxide and indium-tin-oxide thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The electrical, optical, structural, chemical, and etch properties of r.f. magnetron, sputter-deposited thin films of indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) are presented. Polycrystalline thin films of CTO and ITO with distinct diffraction peaks corresponding to the (220), (222), and (400) crystal planes and with an overall preferential ã111ã orientation were obtained at elevated deposition temperatures. The lattice parameter of these films was determined to be 0.948 and 1.026 nm for CTO and ITO, respectively. These thin films possess low resistivities in the 10â4 Ω cm range, Hall mobilities up to 30 cm2/V s, and carrier concentrations in the 1020 cmâ3 range. In excess of 85% of the perpendicularly incident optical radiation, in the 0.85 to 1.55 μm wavelength range, and up to 50% of the incident radiation at a wavelength of 365 nm was transmitted through the CTO and ITO conductors. A variety of wet and dry etching techniques were investigated in order to delineate features in the thin films. From investigations concerned with the Schottky and ohmic contact characteristics of CTO and ITO films deposited on undoped AlGaAs and InAlAs, ideality factors ranging from 1.1 to 1.2 and Schottky barrier heights ranging from 0.67 to 1.05 eV were obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 479, Issues 1â2, 23 May 2005, Pages 223-231
Journal: Thin Solid Films - Volume 479, Issues 1â2, 23 May 2005, Pages 223-231
نویسندگان
Walter Wohlmuth, Ilesanmi Adesida,