کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812761 | 1518119 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation of surface evolution of quantum dot using meshfree approximation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
An ideal way of fabricating quantum dots is by self-assembly that can be simulated using the Stranski-Krastanow growth mode. This paper presents a numerical scheme to simulate the morphology of the quantum dot “island” due to stresses induced by a buried quantum dot. The surface diffusion equation that governs epitaxial growth is solved for the normal surface velocity by using a meshfree interpolation technique-the moving least square method. The normal surface displacement is then deduced and the process is repeated through a difference scheme to obtain the change in surface shape as a function of time. Simulations using the present method have found that the island morphology is affected by various factors including elastic anisotropy, cap layer thickness and crystal orientation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 479, Issues 1â2, 23 May 2005, Pages 297-309
Journal: Thin Solid Films - Volume 479, Issues 1â2, 23 May 2005, Pages 297-309
نویسندگان
S.S. Quek, G.R. Liu,