کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812815 | 1518120 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers](/preview/png/9812815.png)
چکیده انگلیسی
A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 °C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 280-285
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 280-285
نویسندگان
Po-Chun Liu, Chin-Yuan Hou, YewChung-Sermon Wu,