کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812856 | 1518121 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Flexible all-polymer field effect transistors with optical transparency using electrically conducting polymers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We fabricated the flexible All-polymer field effect transistors (FETs) with optical transparency, whose all components were the organic polymeric materials. Active channel and all three electrodes were formed on a flexible polymer substrate using the simple photolithographic patterning technique of the electrically conducting poly(3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy). Transparent photocrosslinkable polymers such as poly(vinyl cinnamate) or Epoxy/MAA polymer were used as the dielectric layer. We investigated the electrical characteristics of the FETs by measuring the source-drain current with sweeping the gate voltage. The source-drain current of the FETs decreased with increase of the positive gate voltage, implying the p-type FETs worked in the depletion mode. We believe the All-polymer FETs have significant advantages over other existing inorganic or organic FETs since the All-polymer FETs can be fabricated using the simple photolithographic process at room temperature and possess mechanical flexibility and optical transparency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 477, Issues 1â2, 22 April 2005, Pages 169-173
Journal: Thin Solid Films - Volume 477, Issues 1â2, 22 April 2005, Pages 169-173
نویسندگان
Myung Sub Lee, Han Saem Kang, Hyun Suk Kang, Jinsoo Joo, Arthur J. Epstein, Jun Young Lee,