کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812933 | 1518122 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of CNx thin films prepared by close field unbalanced magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of CNx thin films prepared by close field unbalanced magnetron sputtering Characterization of CNx thin films prepared by close field unbalanced magnetron sputtering](/preview/png/9812933.png)
چکیده انگلیسی
Carbon nitride (CNx) film is a material that may successfully compete with DLC coatings, which have high hardness, high wear resistance and a low friction coefficient. Carbon nitride film was prepared on silicon substrate by Close Field UnBalanced Magnetron (CFUBM) sputtering with a graphite target and using nitrogen-argon mixture gas. Parameters were obtained on the deposition rate and investigated effect of total working pressure. The characteristic of the carbon nitride films was analyzed by Raman spectroscopy, energy dispersive X-ray (EDX) analysis, and atomic force microscopy (AFM). The tribological properties are also investigated by hardness measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 298-302
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 298-302
نویسندگان
Yong Seob Park, Hyun Sik Myung, Jeon Geon Han, Byungyou Hong,