کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812942 | 1518122 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimer-laser-annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated using TRIM-code simulation. The sheet resistance decreases as the acceleration voltage increases from 1 to 15 kV at the moderate doping conditions. It, however, increases as the acceleration voltage increases under the severe doping conditions. Uncured damage after activation annealing seems to be responsible for the rise in sheet resistance. Three different annealing methods were investigated in terms of dopant activation and damage recovery, such as furnace annealing (FA), excimer laser annealing (ELA) and rapid thermal annealing (RTA), respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 342-347
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 342-347
نویسندگان
Dong-Min Kim, Dae-Sup Kim, Jae-Sang Ro,