کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9813018 | 1518124 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sputtered full-wafer backside metallization for n-type InP: effect of temperature annealing
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Sputtered full-wafer backside metallization for n-type InP: effect of temperature annealing Sputtered full-wafer backside metallization for n-type InP: effect of temperature annealing](/preview/png/9813018.png)
چکیده انگلیسی
A full-wafer backside n-ohmic metallization scheme for InP is reported. The contact is formed by a single-step, all-sputter process and has been used successfully in three-inch InP opto-electronic device manufacturing. The metallization is based on the combination of a nickel-germanium-gold ohmic contact followed by a titanium-titanium nitride-titanium-gold metal stack. The titanium nitride layer acts as a barrier to grain boundary diffusion of indium and other material from the substrate to the surface of the top gold layer. The top gold is required for a gold-tin solder die bond process. The sputter process provides better than 5% cross-wafer and wafer-to-wafer thickness uniformity and a contact resistance of 2.5-8.3Ã10â5 Ω cm2. We report the fabrication process for this metal contact and the results of a full physical characterization by transmission electron microscopy, Auger survey and depth profile analysis and X-ray analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 472, Issues 1â2, 24 January 2005, Pages 76-83
Journal: Thin Solid Films - Volume 472, Issues 1â2, 24 January 2005, Pages 76-83
نویسندگان
St.J. Dixon-Warren, S. Zhang, R. Kuchibhatla, E.M. Griswold, A. Shen, F. Zheng, S.R. Das,