کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9813035 | 1518124 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Distribution of the electrical potential in hydrogenated amorphous silicon solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We report on a direct measurement of the spatial distribution of electrical potential on cross sections of hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells using scanning Kelvin probe microscopy. We found that most voltage has dropped near the p/i interface up to â¼500 nm into the i-layer, but that the voltage flattens out near the n/i region for a device with i-layer thickness of â¼800 nm. However, the potential distributes approximate-linearly on the entire i-layer for a device with i-layer of â¼250 nm. The potential measurements suggest that the i-layer is slightly n-type (6-13Ã1015/cm3), and the depletion width is â¼350-500 nm at the i/p interface. This depletion width provides a direct experimental evidence for the device design criteria that a-Si:H solar cells should be thinner than â¼500 nm, in the point view of electrical potential.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 472, Issues 1â2, 24 January 2005, Pages 203-207
Journal: Thin Solid Films - Volume 472, Issues 1â2, 24 January 2005, Pages 203-207
نویسندگان
C.-S. Jiang, H.R. Moutinho, M.J. Romero, M.M. Al-Jassim, Y.Q. Xu, Q. Wang,