Mobility anisotropy in Langmuir-Blodgett deposited poly(3-methoxypentyl-tiophene)-based thin film transistors

We report on oriented thin films of poly[3-(5-methoxypentyl)-thiophene] (P5OMe) obtained by compressing a monolayer of P5OMe formed at the air/water interface of a Langmuir trough. By using this film as the active layer of a Thin Film Transistor a mobility anisotropy ratio in the range of 10 was measured, which is an unprecedented result for a Langmuir-Blodgett (LB) film.