Preparation and conducting performance of LaNiO3 thin film on Si substrate

LaNiO3 thin film with perovskite structure was successfully prepared on Si (111) substrate via an amorphous heteronuclear complex as precursor. The annealing temperature had a significant effect on the crystallization of LaNiO3 film. The crystallization temperature of the film was higher than that of the powder samples due to the interface reaction between the layer and the substrate. The thickness of LaNiO3 thin film increased with the precursor concentration and the texture of the film could be improved significantly by adding some polyethylene glycol (PEG) as additive. A remarkable decline of the electrical resistivity was observed when the calcination temperature was raised to 800 °C. The conductivity of LaNiO3 film increased gradually when the temperature decreased and the film showed a metallic behavior.