Photoluminescence characteristics of Li-doped Y2O3:Eu3+ thin film phosphors

Li-doped Y2O3:Eu3+ luminescent thin films have been grown on Si (100) and Al2O3 (0001) substrates using a pulsed laser deposition technique. The thin film phosphors were deposited by changing the substrates and the processing conditions (substrate temperature and oxygen pressure). The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The PL intensity of the Li-doped Y2O3:Eu3+ films are highly dependent on the crystallinity and surface roughness of the films. The films are uniaxially textured in both Si (100) and Al2O3 (0001) cases and the films grown on Al2O3 (0001) substrate exhibit the superior crystallization and photoluminescent properties. The brightness of the films grown on Al2O3 (0001) substrate was increased by a factor of 2.1 in comparison with that of the films grown on Si (100) substrate. The photoluminescence intensity and surface roughness have similar behavior as a function of not only oxygen pressure but also substrate temperature. This phosphor may promise for application to the flat panel displays.