کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829502 | 1524493 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic hydrogen cleaning of low-index GaAs surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of atomic hydrogen (AH) exposure on epi-ready, low-index surface orientations of GaAs at 400 °C have been studied using reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). The effective removal of the native oxide by AH from GaAs(0 0 1), (1 1 0) and (1 1 1)A substrates was indicated by the gradual appearance of sharp, intense RHEED patterns, typical of those observed normally for clean, flat surfaces. STM images provided direct evidence for the high quality of the as-cleaned surfaces, with further improvements in surface morphology observed after annealing under an As2 flux and subsequent buffer growth, as evidenced by significant reductions in surface roughness and step density. Our results show that AH treatment is an effective method for preparing atomically smooth GaAs surfaces for use in an epitaxial growth environment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 282, Issues 1â2, 15 August 2005, Pages 1-6
Journal: Journal of Crystal Growth - Volume 282, Issues 1â2, 15 August 2005, Pages 1-6
نویسندگان
A. Khatiri, T.J. Krzyzewski, C.F. McConville, T.S. Jones,