کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829638 | 1524495 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and optical absorption spectra of ZnO films grown by pulsed laser deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and optical absorption spectra of ZnO films grown by pulsed laser deposition Growth and optical absorption spectra of ZnO films grown by pulsed laser deposition](/preview/png/9829638.png)
چکیده انگلیسی
ZnO films on Al2O3 substrate were grown by using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were calculated. The results of the XRD measurement indicate that ZnO film was strongly oriented to the c-axis of hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full-width half-maximum for a theta curve of the (0 0 0 2) peak was 0.201°. Also, from the PL measurement, the grown ZnO film was observed to be a free exciton, which indicates a high quality of epilayer. The Hall mobility and carrier density of the ZnO film at 293 K were estimated to be 299 cm2/V sec and 8.27Ã1016cm-3, respectively. The absorption spectra revealed that the temperature dependence of the optical band gap on the ZnO films was Eg(T)=3.4393eV â (5.30Ã10-4eV/KT2/(367+T).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 545-550
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 545-550
نویسندگان
K.J. Hong, T.S. Jeong,