کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829846 | 1524499 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0Â 0Â 0Â 1)
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کلمات کلیدی
81.05.Ea81.15.Hi68.37.Lp - 68.37 لیتر68.55.−a - 68.55.-aA1. Stresses - A1 استرسA1. Interfaces - A1 رابط هاA1. High resolution X-ray diffraction - A1 پراش اشعه ایکس با وضوح بالاA3. Molecular Beam Epitaxy - A3 اپیتاکسی پرتوهای مولکولیB1. Nitrides - B1 نیتریت هاB2. Semiconducting indium compounds - B2 ترکیبات نیمه هدایت شده ایندیوم
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The heteroepitaxy of In-face InN on Ga-face GaN (0 0 0 1) by nitrogen RF plasma source molecular beam epitaxy, using a two-step growth process, has been investigated. InN nucleation is enhanced at low substrate temperatures and smooth continuous nucleation layers can be grown at 300-350 °C, which provide the necessary template for overgrowing films at a higher temperature near 500 °C. Porous columnar InN structures are grown without the low-temperature nucleation layer, exhibiting a multiplied growth rate along the c-axis. The continuous InN/GaN (0 0 0 1) films are under tensile residual stress at room temperature attributed to the different thermal expansion of InN and GaN. Typical lattice constants are c=0.5691nm and a=0.3544nm for a continuous 0.9 μm film and c=0.5700nm and a=0.3533nm for a columnar 1.6 μm epilayer. A difference in the density of misfit dislocations at the InN/GaN (0001) interface between columnar and continuous films was observed, in agreement with measurements of the films' lattice constants.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 367-372
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 367-372
نویسندگان
E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias, A. Delimitis, A. Georgakilas,