کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829988 | 1524501 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High-quality GaN epitaxial films were successfully grown directly on 4H-SiC substrates. The difficulty in the nucleation as well as the overgrowth of GaN islands, which is often observed during metal-organic chemical vapor deposition, was solved using the concept of an epitaxial lateral overgrowth technique. The continuous mirror-flat GaN epitaxial film could be obtained at a reduced reactor pressure (76 Torr) and a lower N/Ga supply ratio. The full-width half-maximums (FWHMs) of the (0 0 0 2) and (1 0 1¯ 3) rocking curves of the GaN epitaxial films on the 4H-SiC substrate at the optimized condition were 105 and 118 arcsec, respectively, under a skew symmetric diffraction geometry. The intense bound exciton lines with a FWHM of 10 meV and a free exciton peak appeared in the low-temperature photoluminescence spectrum, illustrating the very high quality of the GaN film on 4H-SiC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 3â4, 1 April 2005, Pages 407-414
Journal: Journal of Crystal Growth - Volume 276, Issues 3â4, 1 April 2005, Pages 407-414
نویسندگان
Jae Kyeong Jeong, Jung-Hae Choi, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim,