The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors Fulltext Access 4 Pages 2005
A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures Fulltext Access 4 Pages 2005
Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200 °C Fulltext Access 4 Pages 2005
Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4Â +Â O2 Fulltext Access 4 Pages 2005
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD Fulltext Access 4 Pages 2005
Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films Fulltext Access 4 Pages 2005
Optical and electrical characterization of hafnium oxide deposited by MOCVD Fulltext Access 4 Pages 2005
Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric Fulltext Access 4 Pages 2005
Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition Fulltext Access 4 Pages 2005
Numerical solution of an inverse problem of gravimetry for a contact surface Fulltext Access 4 Pages 2005
Nonexistence of solutions for reverse radial stagnation flow with transpiration Fulltext Access 4 Pages 2005
A counterexample for the global separation principle for discrete-time nonlinear systems Fulltext Access 4 Pages 2005
On pulse vaccination strategy in the SIR epidemic model with vertical transmission Fulltext Access 4 Pages 2005
Investigation of charging mechanisms in metal-insulator-metal structures Fulltext Access 4 Pages 2005
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers Fulltext Access 4 Pages 2005
Breakdown spots of ultra-thin (EOTÂ <Â 1.5Â nm) HfO2/SiO2 stacks observed with enhanced-CAFM Fulltext Access 4 Pages 2005
Impact of nitrogen incorporation on interface states in (1Â 0Â 0)Si/HfO2 Fulltext Access 4 Pages 2005
Observation and characterization of defects in HfO2 high-K gate dielectric layers Fulltext Access 4 Pages 2005
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance Fulltext Access 4 Pages 2005
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics Fulltext Access 4 Pages 2005
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey Fulltext Access 4 Pages 2005
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors Fulltext Access 4 Pages 2005
Electrical properties of highly reliable 32Â Mb FRAM with advanced capacitor technology Fulltext Access 4 Pages 2005
Thermal and electrostatic reliability characterization in RF MEMS switches Fulltext Access 4 Pages 2005
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor Fulltext Access 4 Pages 2005
Specification and use of pulsed current profiles for ultracapacitors power cycling Fulltext Access 4 Pages 2005
A novel fast and versatile temperature measurement system for LDMOS transistors Fulltext Access 4 Pages 2005
Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations Fulltext Access 4 Pages 2005
Trench insulated gate bipolar transistors submitted to high temperature bias stress Fulltext Access 4 Pages 2005
Reliability Potential Of Epoxy Based Encapsulants For Automotive Applications Fulltext Access 4 Pages 2005
A simple moisture diffusion model for the prediction of optimal baking schedules for plastic SMD packages Fulltext Access 4 Pages 2005
Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systems Fulltext Access 4 Pages 2005
Non-destructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist Fulltext Access 4 Pages 2005
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides Fulltext Access 4 Pages 2005
Examination and evaluation of La2O3 as gate dielectric for sub-100Â nm CMOS and DRAM technology Fulltext Access 4 Pages 2005
Electrical properties of MIS capacitor using low temperature electron beam gun-evaporated HfAlO dielectrics Fulltext Access 4 Pages 2005
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD Fulltext Access 4 Pages 2005
Electrical properties in low temperature range (5Â K-300Â K) of Tantalum Oxide dielectric MIM capacitors Fulltext Access 4 Pages 2005
Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales Fulltext Access 4 Pages 2005
Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2 Fulltext Access 4 Pages 2005
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric Fulltext Access 4 Pages 2005
Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3Â nm thick oxides Fulltext Access 4 Pages 2005
Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy Fulltext Access 4 Pages 2005
Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing Fulltext Access 4 Pages 2005
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability Fulltext Access 4 Pages 2005
Optimization of low temperature silicon nitride processes for improvement of device performance Fulltext Access 4 Pages 2005
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics Fulltext Access 4 Pages 2005
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown Fulltext Access 4 Pages 2005
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Fulltext Access 4 Pages 2005
Admittance spectroscopy of traps at the interfaces of (1Â 0Â 0)Si with Al2O3, ZrO2, and HfO2 Fulltext Access 4 Pages 2005