Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal morphology; A1. Recrystallization; A3. Physical vapor deposition processes; A3. Solid phase epitaxy; B1. Nitrides;
مقالات ISI A3 فرایندهای رسوبدهی بخار فیزیکی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A3. Physical vapor deposition processes; B1. Nanomaterials; B2. Semiconducting aluminum compounds; B2. Semiconducting silicon compounds;
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Diffusion; A1. Nanostructures; A3. Physical vapor deposition processes; B1. Organic compounds
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal morphology; A1. Recrystallization; A3. Physical vapor deposition processes; A3. Solid phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A3. Chemical vapor deposition processes; A3. Physical vapor deposition processes; B2. Semiconducting aluminum compounds; B2. Semiconducting silicon compounds
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystallization; A3. Physical vapor deposition processes; B2. Semiconducting silicon; B3. Solar cells;
Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal structure; A1. Segregation; A3. Physical vapor deposition processes; B1. Alloys; B2. Semiconducting germanium;
The effect of Na on Cu-K-In-Se thin film growth
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal morphology; A1. Segregation; A1. Solid solutions; A3. Physical vapor deposition processes; B1. Alloys; B2. Semiconducting materials;
Optimized optical vapor supersaturated precipitation for time-saving growth of ultrathin-walled ZnO single-crystal microtubes
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Characterization; A1. Crystallites; A3. Physical vapor deposition processes; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Hg1âxCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A3. Physical vapor deposition processes; B1. Cadmium compounds; B1. CdZnTe; B1. HgCdTe; B2. Semiconducting materials; B3. Infrared devices;
Growth of p-type ZnOS films by pulsed laser deposition
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Point defects; A3. Physical vapor deposition processes; B1. Oxides; B2. Semiconducting II-VI materials;
Structural changes in nanocrystalline Bi2Te3/Bi2Se3 multilayer thin films caused by thermal annealing
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal structure; A1. Nanostructures; A3. Physical vapor deposition processes; B1. Bismuth compounds; B2. Semiconducting III-V materials;
The process of growing Cr2O3 thin films on α-Al2O3 substrates at low temperature by r.f. magnetron sputtering
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystallites; A1. Defects; A1. X-ray diffraction; A3. Sapphire; A3. Physical vapor deposition processes; A3. Selective epitaxy;
Infiltration of CdTe nano crystals into a ZnO wire vertical matrix by using the isothermal closed space technique
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Low dimensional structures; A2. Hydrothermal crystal grown; A3. Physical vapor deposition processes; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal structure; A3. Physical vapor deposition processes; A3. Heteroepitaxy; B1. Oxide; B2. Ferroelectric materials; B3. Nonvolatile memory;
Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal structure; A3. Physical vapor deposition processes; A3. Vapor phase epitaxy; B2. Magnetic materials; B2. Piezoelectric materials;
Crystallinity control of SiC grown on Si by sputtering method
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds; B3. Heterojunction semiconductor devices; B3. Solar cells;
Ferroelectric domain of epitaxial AgNbO3 thin film
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Atomic force microscopy; A3. Physical vapor deposition processes; B1. Perovskites; B2. Ferroelectric materials
Vapor phase growth and photoluminescence of oriented-attachment Zn2GeO4 nanorods array
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Nanostructures; A3. Physical vapor deposition processes; B1. Oxides
Magnetic anisotropy of epitaxially (100)- and (111)-oriented Sr0.8Ho0.2CoO3−δ thin films on SrTiO3 substrates
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Physical vapor deposition processes; B1. Oxides; B2. Magnetic materials
Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A3. Physical vapor deposition processes; B1. Oxides; B1. Lithium compounds; B1. Titanium compounds; B2. Oxide superconducting materials;
ZrB2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB2 target
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. X-ray diffraction; A1. Interfaces; A1. Energy-dispersive X-ray spectroscopy; A1. Electron energy loss spectroscopy; A3. Physical vapor deposition processes; B1. Borides;
Ionic liquid-assisted growth of DBTTF-TCNQ complex organic crystals by vacuum co-deposition
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal morphology; A2. Growth from solutions; A3. Physical vapor deposition processes; B1. Organic compounds; B2. Semiconducting materials; B3. Solar cells;
Two-dimensional bismuth-rich nanosheets through the evaporative thinning of Se-doped Bi2Te3
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A3. Evaporative thinning; A1. Solid solutions; A3. Physical vapor deposition processes; B2. Topological insulators; B1. Nanomaterials; B2. Semiconducting ternary compounds
The lateral In2O3 nanowires and pyramid networks manipulation by controlled substrate surface energy in annealing evolution
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Nanostructure; A1. Recrystallization; A1. Growth models; A3. Physical vapor deposition processes; B1. Oxides; B2. Semiconducting indium compounds
Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. X-ray diffraction; A3. Polycrystalline deposition; A3. Physical vapor deposition processes; B1. Nitride; B1. Silicon carbide;
Synthesis and characterization of β-Ga2O3 nanowires on amorphous substrates using radio-frequency powder sputtering
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Nanostructures; A1. Characterization; A1. Growth models; A3. Physical vapor deposition processes; B1. Gallium compounds;
Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Growth models; A3. Physical vapor deposition processes; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. X-ray diffraction; A1. X-ray photoelectron spectroscopy; A3. Physical vapor deposition processes; B1. Borides
Structural and optical properties of ε-phase tris(8-hydroxyquinoline) aluminum crystals prepared by using physical vapor deposition method
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal morphology; A3. Physical vapor deposition processes; B1. Organic compounds; B2. Semiconducting materials;
Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Biomaterials; A1. Crystal structure; A3. Physical vapor deposition processes; A3. Solid phase epitaxy; B1. Phosphates;
Morphological and structural evolution during thermally physical vapor phase growth of PbI2 polycrystalline thin films
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Atomic force microscopy; A1. Growth models; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B2. Semiconducting lead compounds;
Molecular orientation transformation of pentacene on amorphous SiO2: A computational study on the initial growth stage of physical vapor deposition
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Computer simulation; A1. Growth models; B3. Field effect transistors; B1. Organic compounds (pentacene); A3. Physical vapor deposition processes;
Obtaining phase-pure CZTS thin films by annealing vacuum evaporated CuS/SnS/ZnS stack
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B2. Semiconducting quaternary alloys; B3. Solar cells;
Temperature-dependent orientation study of the initial growth of pentacene on amorphous SiO2 by molecular dynamics simulations
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Computer simulation; A3. Physical vapor deposition processes; B1. Organic compounds (pentacene); B3. Field effect transistors; (Substrate temperature);
Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiophene-dimer films
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Atomic force microscopy; A3. Physical vapor deposition processes; B1. Organic compounds; B2. Semiconducting organic material; B3. Field effect transistors;
Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Characterization; A3. Physical vapor deposition processes; B1. Inorganic compounds; B2. Semiconducting indium compounds; B2. Semiconducting alloys; B2. Quaternary; B3. Solar cells
Influence of hydrogen incorporation on texture and grain size in YH2 films
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. X-ray diffraction; A3. Physical vapor deposition processes; B1. Yttrium compounds; B2. Hydrogen storage materials
Change in the branch period of the step pattern formed by a moving linear source-initial coarsening and effect of an abrupt change in the velocity
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Computer simulation; A1. Morphological instability; A1. Surface processes; A3. Physical vapor deposition processes; B2. Semiconducting silicon;
Growth control of nonpolar and polar ZnO/MgxZn1−xOZnO/MgxZn1−xO quantum wells by pulsed-laser deposition
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Reflection high energy electron diffraction; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Physical vapor deposition processes; A3. Quantum wells; B1. Zinc oxide
Reprint of: State of the art of the heavy metal iodides as photoconductors for digital imaging
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Nanostructures; A1. Nucleation; A3. Physical vapor deposition processes; B1. Bismuth compounds; B2. Semiconducting mercury compounds; B2. Semiconducting lead compounds
High throughput growth and characterization of thin film materials
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Characterization; A3. Physical vapor deposition processes; B1. Alloys; B2. Semiconducting materials
State of the art of the heavy metal iodides as photoconductors for digital imaging
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Nanostructures; A1. Nucleation; A3. Physical vapor deposition processes; B1. Bismuth compounds; B2. Semiconducting mercury compounds; B2. Semiconducting lead compounds
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Surface structure; A1. Atomic force microscopy; A1. Helium ion microscopy; A3. Physical vapor deposition processes; B1. Titanium compound
NH3-free growth of GaN nanostructure on n-Si (1 1 1) substrate using a conventional thermal evaporation technique
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Si (111) substrate; A1. Nanostructures; A1. Gases carrier flows; A2. Growth from vapor; A3. Physical vapor deposition processes; B1. Nanomaterials
Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Characterization; A1. Substrates; A3. Physical vapor deposition processes; B1. VO2; B2. Metal–insulator transition materials
Epitaxial relationships of ZnO nanostructures grown by Au-assisted pulsed laser deposition on c- and a-plane sapphire
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Growth models; A1. X-ray diffraction; A1. Nanostructures; A3. Physical vapor deposition processes; B1. Oxides;
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Diffusion; A3. Physical vapor deposition processes; B2. Magnetic materials; B2. Semiconducting III–V materials
Buffer-layer-enhanced growth of a single-domain LaB6 (1 0 0) epitaxial thin film on a MgO (1 0 0) substrate via pulsed laser deposition
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Crystal structure; A3. Laser epitaxy; A3. Migration enhanced epitaxy; A3. Physical vapor deposition processes; B1. Inorganic compounds; B1. Nanomaterials
Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films
Keywords: A3 فرایندهای رسوبدهی بخار فیزیکی; A1. Doping; A1. Defects; A3. Physical vapor deposition processes; B1. Oxides; B2. Magnetic materials; B2. Semiconducting II–VI materials