
The effect of Sb surfactant assisted growth on SiGe surface morphology
Keywords: میکروسکوپ تونلی روبشی ; Scanning tunneling microscopy; Surfactant assisted growth; SiGe heteroepitaxy; Si (100); Ge segregation; Surface morphology; Molecular beam epitaxy; 68.55; 81.15.H; 61.16.C;