کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9813054 | 1518124 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ternary phase analysis of interfacial silicates grown in HfOx/Si and Hf/SiO2/Si systems
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ternary phase analysis of interfacial silicates grown in HfOx/Si and Hf/SiO2/Si systems Ternary phase analysis of interfacial silicates grown in HfOx/Si and Hf/SiO2/Si systems](/preview/png/9813054.png)
چکیده انگلیسی
The annealing of two different film stacks, i.e., HfOx/Si and Hf/SiO2/Si, was investigated in situ in an ultrahigh vacuum by using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Although a kinetic metastability in the incongruently melting compounds such as HfO2 was reported to form SiO2 and HfO2 separately at the interface with Si, interfacial silicates (HfâOâSi bonding units) were grown irrespective of film stacks. Ternary phase consideration in the Hf-Si-O system suggests that many nonstoichiometric silicates can be formed from the solid solutions of various compositions. The presence of nonstoichiometric silicates is ascertained by the STM results that show vagueness between oxygen-poor silicates and oxygen-containing silicides.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 472, Issues 1â2, 24 January 2005, Pages 317-322
Journal: Thin Solid Films - Volume 472, Issues 1â2, 24 January 2005, Pages 317-322
نویسندگان
Jung-Ho Lee,