کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10136045 | 1645676 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Use of H2-Ar gas mixtures in radio-frequency magnetron sputtering to produce high-performance nanocrystalline bismuth telluride thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Use of H2-Ar gas mixtures in radio-frequency magnetron sputtering to produce high-performance nanocrystalline bismuth telluride thin films Use of H2-Ar gas mixtures in radio-frequency magnetron sputtering to produce high-performance nanocrystalline bismuth telluride thin films](/preview/png/10136045.png)
چکیده انگلیسی
Nanocrystalline bismuth telluride (Bi2Te3) thin films with good thermoelectric performance were prepared using mixtures of hydrogen and argon gas by radio-frequency magnetron sputtering. The effects of hydrogen addition on the surface morphology, crystal structure, elemental composition, and thermoelectric properties of the Bi2Te3 thin films were investigated. The mixing ratio, H2/(H2â¯+â¯Ar), was varied from 0 to 15%. The thin films were deposited on glass substrates heated at 200â¯Â°C. It was observed that the surface morphologies of the thin films were greatly affected by the mixing ratio. The deposition rate and composition ratio Te/(Bi+Te) decreased with increasing mixing ratio, indicating that tellurium atoms evaporated from the film surface by a chemical reaction between hydrogen and tellurium. The oxygen concentration inside the films decreased as the mixing ratio increased, resulting in an increased power factor. A maximum power factor of 9.0â¯Î¼W/(cm·K2) was observed at a mixing ratio of 10%, as this thin film showed a relatively high electrical conductivity and high Seebeck coefficient. However, at a higher mixing ratio of 15%, the power factor of the thin film drastically decreased, possibly due to the appearance of the hexagonal BiTe phase, which exhibits metallic characteristics. Therefore, we conclude that the addition of a moderate amount of hydrogen (10%) during sputtering can improve the thermoelectric performance of Bi2Te3 thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 664, 31 October 2018, Pages 100-105
Journal: Thin Solid Films - Volume 664, 31 October 2018, Pages 100-105
نویسندگان
Masayuki Takashiri, Kousuke Takano, Jun Hamada,