کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10147689 | 1646496 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Combined in-depth X-ray Photoelectron Spectroscopy and Time-of-Flight Secondary Ion Mass Spectroscopy study of the effect of deposition pressure and substrate bias on the electrical properties and composition of Ga-doped ZnO thin films grown by magnetron
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work reports the effect of the applied substrate bias and deposition pressure on the bulk composition, electrical and microstructural properties of Gallium-doped Zinc Oxide thin films deposited by DC magnetron sputtering. In-depth Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy studies were endured to determine the Ga content for the varying process conditions. Experiments confirm that the bulk composition of all films is homogeneous and that an optimized Ga doping of 3.9â¯at.% is obtained for a substrate bias of â100â¯V and deposition pressure of 0.51â¯Pa. It was also verified that films with lower electrical resistivity (2.6â¯Ãâ¯10â3â¯Î©âcm) have a hexagonal wurtzite structure with [001] preferred crystallographic direction. These transparent conductive oxide thin films have potential applications as electrodes in photovoltaics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 665, 1 November 2018, Pages 184-192
Journal: Thin Solid Films - Volume 665, 1 November 2018, Pages 184-192
نویسندگان
Filipe C. Correia, Joana M. Ribeiro, Paulo B. Salvador, Alexander Welle, Michael Bruns, Adélio Mendes, Carlos J. Tavares,