کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10669622 | 1008762 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Differential 3Ï method for measuring thermal conductivity of AlN and Si3N4 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The thermal conductivity λ of plasma enhanced chemical vapor deposited Si3N4 and sputtered AlN thin films deposited on silicon substrates were obtained utilizing the differential 3Ï method. A thin electrically conductive strip was deposited onto the investigated thin film of interest, and used as both a heater and a temperature sensor. To study the thickness dependent thermal conductivity of AlN and Si3N4 films their thickness was varied from 300 to 1000 nm. Measurements were performed at room temperature at a chamber pressure of 3.1 Pa. The measured thermal conductivity values of AlN and Si3N4 thin films were between 5.4 and 17.6 Wmâ 1 Kâ 1 and 0.8 up to 1.7 Wmâ 1 Kâ 1, respectively. The data were significantly smaller than that of the bulk materials found in literature (i.e., λAlN = 250-285 Wmâ 1 Kâ 1, λSi3N4 = 30 Wmâ 1 Kâ 1), due to the scaling effects, and also strongly dependent on film thickness, but were comparable with literature for the corresponding thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 591, Part B, 30 September 2015, Pages 267-270
Journal: Thin Solid Films - Volume 591, Part B, 30 September 2015, Pages 267-270
نویسندگان
Manuel Bogner, Alexander Hofer, Günther Benstetter, Hermann Gruber, Richard Y.Q. Fu,