کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10669697 | 1008781 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical metrology of thick photoresist process for advanced 3D applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In semiconductor and Micro-Electro-Mechanical Systems production, thick resist films are indispensable for circuit formation, chemical mechanical planarization, or wafer-level packaging applications. We investigate multiple metrology protocols that aim at meeting the needs for fast, accurate, full-wafer determination of the thickness of up to 100 μm thick resist layers deposited on silicon or glass wafers. We found very effective to use a two-step strategy consisting of: i/ an accurate determination of the optical characteristics of the photoresist based on prism-coupling technique, and ii/ the fast, full-wafer measurement of the wafers of interest, using high-resolution spectroscopic reflectometry (SR). The robustness of this strategy increased when analyzing the SR data with a Fourier transform (FT) based algorithm which combines FT-based filtering around the thickness of interest with spectral matching to improve measurement performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 571, Part 3, 28 November 2014, Pages 609-614
Journal: Thin Solid Films - Volume 571, Part 3, 28 November 2014, Pages 609-614
نویسندگان
E. Nolot, A. André, C. Scibetta, M. Poulingue, L. Levin, L. Vignoud, H. Isselé,