Research on surface modification and infrared emissivity of In2O3: W thin films

Tungsten-doped indium oxide films (In2O3: W, IWO) were deposited on glass substrates by DC reactive magnetron sputtering method. The as-deposited IWO films have a minimum resistivity of 6.3 × 10− 4 Ω·cm and an average infrared emissivity of 0.22 in 8-14 μm. The average transmittance is about 90% in visible region and above 81% in near-infrared region. Polystyrene microsphere template and DC magnetron sputtering were used to prepare an Ag micro-grid monolayer on the as-deposited IWO films. After surface modification, the resistivity of the films was reduced by 50% and the average infrared emissivity in 8-14 μm also reduced by 25%. The effects of sphere size and sputtering time on the surface morphology, optical and electrical properties, and infrared emissivity of the IWO thin films were investigated and the mechanism was studied.