Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0,3In0,7Se2 thin films using close spaced vapor transport technique

► A thermodynamic model is proposed to study the deposition of CuGa0,3In0,7Se2. ► The model is based on the minimization of the Gibbs energy of Cu-Ga-In-Se-I system. ► Temperature and iodine pressure to depose stoichiometric thin films are determined. ► The thermodynamic calculations are in good agreement with the experimental results.