Atomic layer deposition of Ru thin film using N2/H2 plasma as a reactant

► Atomic layer deposition (ALD) of Ru and N-incorporated Ru film using N2/H2 plasma. ► The growth rate of 0.057 nm/cycle and negligible incubation cycle. ► A low resistivity of Ru (~ 16.5 μΩ cm) at the deposition temperature of 270 °C. ► Electroplating of Cu on a 10-nm-thick ALD-Ru film.