Oxygen pressure dependent VO2 crystal film preparation and the interfacial epitaxial growth study

► High quality VO2 films with different phase structures were obtained by PLD method. ► High oxygen pressure tends to form B-VO2 while low pressure favors M1-VO2 film. ► φ-scan XRD confirms the [020] epitaxial growth orientation of the M1-VO2 film. ► The epitaxial relationship is explained based on domain matching theory. ► M1-VO2 film shows excellent optical property in infrared range.