Annealing effect on cadmium in situ doping of chemical bath deposited PbS thin films

► PbS and Cd-doped PbS thin films were prepared by chemical bath deposition. ► Annealing induced changes in the physical properties of the films were studied. ► Doping results in a considerable increase of band gap energy of up to 2.66 eV. ► Variations in the band gap are addressed in the light of quantum size effects.