Synthesis of graphene on SiC substrate via Ni-silicidation reactions

► Low temperature preparation of graphene by the annealing of Ni/SiC structures. ► Raman spectroscopy used for the analyzing of graphene layers. ► Optimal structure Ni(200)/SiC annealed at 1080 °C for 10 s. ► Graphene prepared in the form of 3-4 carbon monolayers.