کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10670013 1008846 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature
چکیده انگلیسی
CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (TS > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 7, 31 January 2012, Pages 2532-2536
نویسندگان
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