کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670013 | 1008846 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (TSÂ >Â 300Â K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300Â K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300Â K for the sample prepared at 300Â K substrate temperature. The dominant conduction mechanism of the samples prepared at 200Â K and 100Â K is determined as thermionic emission over 200Â K and Mott's hopping process below 200Â K. The Mott's hopping process is not applicable for the sample prepared at 300Â K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 7, 31 January 2012, Pages 2532-2536
Journal: Thin Solid Films - Volume 520, Issue 7, 31 January 2012, Pages 2532-2536
نویسندگان
M. Tomakin, M. AltunbaÅ, E. Bacaksiz, Å. Ãelik,