Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

►AlN thin films were deposited by plasma-enhanced ALD using TMA and NH3. ►Constant growth rate of ~ 0.86 Å/cycle was observed from 100 to 200 °C. ►AlN films were polycrystalline with a hexagonal wurtzite structure. ►Films exhibited an optical band edge at ~ 5.8 eV. ►Films were highly transparent in the visible region of the spectrum.