کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670122 | 1008846 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors](/preview/png/10670122.png)
چکیده انگلیسی
Effects of surface passivation and the interfacial layer on the reliability characteristics of Al/HfYOx/GaAs metal-oxide-semiconductor capacitor structures are reported. Stress-induced leakage current mechanism, critical for understanding the degradation and breakdown in Al/HfYOx/GaAs capacitors, has been studied in detail. While the devices fabricated with (NH4)2S-passivated GaAs substrates show both the soft and hard breakdown failure modes, capacitors with ultrathin interfacial layer (Ge or Si) show only hard breakdown. It is shown that the degradation dynamics follows more closely the logistic power-law relationship rather than the conventional power-law model, frequently used to describe leakage current conduction in high-k gate dielectrics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 7, 31 January 2012, Pages 2956-2959
Journal: Thin Solid Films - Volume 520, Issue 7, 31 January 2012, Pages 2956-2959
نویسندگان
E. Miranda, C. Mahata, T. Das, J. Suñé, C.K. Maiti,