کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670202 | 1008853 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of rubrene polycrystalline thin film transistors fabricated using various heat-treatment conditions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We observed the crystal structure changes of rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films on SiO2/Si(100) substrates at various heat-treatment temperatures by X-ray diffraction, and a near-field microwave microprobe technique. An amorphous rubrene thin film was initially observed at heat-treatment temperature of 35 °C. After the treatment with in-situ vacuum post-annealing at 80 °C for 22 h, the rubrene thin film was transformed from the amorphous phase into a crystalline phase of orthorhombic structure. We could obtain a higher field effect mobility of 0.047 cm2/V·s and lower threshold voltage of â 4 V for the following heat-treatment process: pre-annealing at 80 °C, cooling at 40 °C, and post-annealing at 80 °C for 22 h.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5562-5566
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5562-5566
نویسندگان
Youngwoon Yoon, Songhui Kim, Hanju Lee, Taedong Kim, Arsen Babajanyan, Kiejin Lee, Barry Friedman,