کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670241 | 1008853 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon dioxide thin film derived from polyphenylcarbosilane under an oxidizing atmosphere
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A polyphenylcarbosilane (PPCS) precursor was heated under an oxidizing atmosphere to form a silicon dioxide thin film, although the PPCS precursor coated on silicon carbide fiber is usually heated under a reducing atmosphere for high strength ceramics. The PPCS phase decomposed and then recombined with numerous oxygen and phenyl groups. Finally, it was converted from hybrid to inorganic material in a temperature range of 400 °C to 550 °C under an oxidizing atmosphere. Based on our results, the PPCS precursor can be changed into silicon dioxide via heat treatment under an oxidizing atmosphere, and can serve as an alternative to SiO2 for high performance electric devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5706-5711
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5706-5711
نویسندگان
Yonghyeon Yu, Hyunsang Jung, Jeonghyeon Lee, Seongjin Hwang, Younghee Kim, Hyungsun Kim,