کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670464 | 1008866 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of pulsed laser deposited hydrogenated amorphous silicon films by spectroscopic ellipsometry
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of pulsed laser deposited hydrogenated amorphous silicon films by spectroscopic ellipsometry Characterization of pulsed laser deposited hydrogenated amorphous silicon films by spectroscopic ellipsometry](/preview/png/10670464.png)
چکیده انگلیسی
The wide absorption band of hydrogenated amorphous silicon (a-Si:H) is being realized as a key component of solar cells on glass. In this study, a-Si:H films were prepared by reactive pulsed laser deposition onto silicon and glass substrates. Ellipsometry showed that the optical properties of the films are effectively independent on the choice of substrate. According to the optical properties, the character of the films changes from amorphous silicon to dielectric as the hydrogen background pressure increases from 0 to 25Â Pa. This observation was attributed to oxygen incorporation indicated by Rutherford Backscattering Spectrometry. Furthermore, a refractive index gradient in depth was revealed, which was attributed to the oxygen concentration gradient.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2855-2858
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2855-2858
نویسندگان
István Hanyecz, Judit Budai, Edit Szilágyi, Zsolt Tóth,