کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670468 | 1008866 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system](/preview/png/10670468.png)
چکیده انگلیسی
Hydrogenated amorphous silicon (a-Si H) films deposited on crystalline silicon substrates using the DC saddle field (DCSF) plasma enhanced chemical vapor deposition (PECVD) system have been investigated. We have determined the complex dielectric function, ε(E) = ε1(E) + iε2(E) for hydrogenated amorphous silicon (a-Si:H) thin films by spectroscopic ellipsometry (SE) in the 1.5-4.5 eV energy range at room temperature. The results indicate that there is a change in the structure of the a-Si:H films as the thickness is increased above 4 nm. This is attributed to either an increase in the bonded hydrogen content and, or a decrease of voids during the growth of a-Si:H films. The film thickness and deposition temperature are two important parameters that lead to both hydrogen content variation and silicon bonding change as well as significant variations in the optical band gap. The influence of substrate temperature during deposition on film and interface properties is also included.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2863-2866
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2863-2866
نویسندگان
Jhantu Kumar Saha, Barzin Bahardoust, Keith Leong, Adel B. Gougam, Nazir P. Kherani, Stefan Zukotynski,