کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670472 | 1008866 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films](/preview/png/10670472.png)
چکیده انگلیسی
Spectroscopic ellipsometry (SE) measurements were carried out in order to characterize the optical properties of silicon nanoscale inclusions (Si-ni) contained in silicon-rich silicon nitride (SRSN) films. These films were deposited using the plasma enhanced chemical vapor deposition (PECVD) technique followed by rapid thermal annealing (RTA) during 1Â min. We focus our study on the influence of the deposition and annealing conditions - such as the ammonia to silane flow ratio R, the annealing atmosphere and temperature - on the optical responses of the SRSN layers and the behavior of the Si-ni dielectric functions. Our results suggest that the variation of R affects in a more significant way the structure and optical properties of the SRSN films than the change of the annealing gas or temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2870-2873
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2870-2873
نویسندگان
A.-S. Keita, A. En Naciri, F. Delachat, M. Carrada, G. Ferblantier, A. Slaoui, M. Stchakovsky,