کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670490 | 1008866 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of optical properties of benzocyclobutene wafer bonding layer used for 3D interconnects via infrared spectroscopic ellipsometry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Benzocyclobutene (BCB) used for bonding silicon wafers to enable 3D interconnect technology is characterized using spectroscopic ellipsometry (SE). SE is a non-destructive technique that has been used to characterize the thickness and dielectric properties of BCB. The infrared (IR) absorption spectrum was used to calculate the percentage of curing of BCB on 300Â mm bare and bonded wafers. The percentage of curing in BCB is a key parameter that impacts the bond strength and bond quality. This study presents the potential application of IRSE for measurements on bonded wafers to characterize the chemical information, curing percentage, bond quality and thickness of the BCB bonding layer. One of the key issues in the process development and characterization of BCB bonding for 3D interconnects of 300Â mm wafers is the presence of dendrites and voids between the bonded wafers. The presence of dendrites and voids was identified by using scanning acoustic microscopy (SAM) and imaged by scanning electron microscope (SEM).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2924-2928
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2924-2928
نویسندگان
Vimal K. Kamineni, Pratibha Singh, LayWai Kong, John Hudnall, Jamal Qureshi, Chris Taylor, Andy Rudack, Sitaram Arkalgud, Alain C. Diebold,