کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10670636 1008976 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
چکیده انگلیسی
Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 476, Issue 1, 1 April 2005, Pages 68-72
نویسندگان
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