کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670715 | 1009006 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 °C were cubic crystalline InN; and at 500 °C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 °C. The inclusion of metallic indium appeared on the InN film deposited at 500 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 476, Issue 2, 8 April 2005, Pages 276-279
Journal: Thin Solid Films - Volume 476, Issue 2, 8 April 2005, Pages 276-279
نویسندگان
Hiroyuki Shinoda, Nobuki Mutsukura,