کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10670729 1009006 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preliminary evaluation of interfacial stability of surface modified porous methyl silsesquioxane by ion implantation for copper metallization scheme
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Preliminary evaluation of interfacial stability of surface modified porous methyl silsesquioxane by ion implantation for copper metallization scheme
چکیده انگلیسی
Thin films of ultra-low-κ materials such as porous methyl silsesquioxane (MSQ) (κ=2.2) were implanted with argon 1×1016 cm−2 dose at energies varying from 20 to 50 keV at room temperature. This work shows that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1×1016 cm−2 doses at 20 keV, sacrificing only a slight increase (∼9%) in dielectric constant (e.g., from 2.2 to 2.4). The hardness persists after 450 °C annealing. In this current work, an ion implantation strategy was pursued to create a SiO2-like surface on MSQ. The effects of implantation parameters on the barrier property and bulk stability of MSQ were then studied. The results reveal one possible route to attain the “zero barrier thickness” requirement for interconnects systems.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 476, Issue 2, 8 April 2005, Pages 322-325
نویسندگان
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