کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10670753 1009006 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of oxidation on thickness dependencies of thermoelectric properties in PbTe/mica thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of oxidation on thickness dependencies of thermoelectric properties in PbTe/mica thin films
چکیده انگلیسی
The dependencies of the Hall coefficient RH and Seebeck coefficient S at room temperature on the thickness (d=10-550 nm) of thin PbTe films prepared by the thermal evaporation in vacuum of n-type PbTe crystals with various charge carrier concentrations (1017-1019 cm−3) and their deposition on mica substrates were obtained. It was established that, with decreasing thickness of PbTe films, a transition from an electron to a hole conductivity occurs, and the inversion point shifts to smaller d values as the electron concentration in the target material increases. The experimental RH(d) and S(d) dependencies are interpreted in terms of the acceptor states created by oxygen on the film surface. These dependencies were also calculated theoretically, taking into account the existence of two types of charge carriers (electrons and holes). The theoretical curves are found to be in good agreement with the experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 476, Issue 2, 8 April 2005, Pages 391-395
نویسندگان
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